Projected phase-change memory devices

Projected phase-change memory devices

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected...

Thermal Properties of Nanostructured Electrodes for Phase Change Memory Devices

Interfacial phase-change memory.

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decrease...

A cellular automata approach for the simulation and development of advanced phase change memory devices

Phase change devices in both optical and electrical formats have been subject of intense research since their discovery by Ovshinsky in the early 1960’s. They have revolutionized the technology of optical data storage and have very recently been adopted for non-volatile semiconductor memories. Their great success relies on their remarkable properties enabling high-speed, low power consumption a...

Direct observation of nanometer-scale Joule and Peltier effects in phase change memory devices

change memory devices Kyle L. Grosse, Feng Xiong, Sungduk Hong, William P. King, and Eric Pop Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Illinois 61801, USA Micro and Nanotechnology Lab, University of Illinois at Urbana-Champaign, Illinois 61801, USA Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, ...